With Outstanding ESD Protection Levels of Greater than 30kV Contact, OnChip’s ESD60x120 Silicon Zener Diodes are Available in Various Clamp Voltage Levels to Accommodate a Wide Range of Applications

Santa Clara, CA – OnChip Devices, a world leader in Integrated Passive Devices (IPD), has introduced miniature, wire-bondable, 1-channel silicon electrostatic discharge (ESD) protection diodes that are offered in various breakdown voltages. These ESD60x120 Zener diodes are Transient Voltage Suppressors that are available in seven breakdown voltage levels, which range from 6V to 40V with intermediate values of 8V, 13V, 14V, 20V, and 37V. They are designed with a very large single top-pad that simplifies wire-bonding. This large top-pad can potentially be used as a Chip Carrier targeted towards High Power LEDs, RF Circuits, Microwave Modules, and various other applications that require very high levels of ESD protection. The ESD60x120 diodes have a large cross-sectional area junction enabling the conduction of high transient currents. They provide superior electrical characteristics such as lower clamping voltage and exhibit literally no performance degradation when compared to Multilayer Varistors (MLV). All devices safely dissipate ESD strikes of over 30kV contact discharge per IEC-61000 International Standard, meet the stringent MIL-STD-883 conditions, and are in full RoHS compliance. When selecting the right Zener diode for ESD protection, engineers should ensure that the breakdown voltage of the ESD60x120 is larger than the Maximum Operating Voltage or Signal Amplitude of the circuit that needs to be protected.

“We are excited to launch a new silicon Zener diode family that offers the highest level of transient voltage protection available in the industry” said Ashok Chalaka, President and CEO. OnChip’s ESD60x120 diodes are 60 x 120 mils (1.5mm x 3mm) in size with a much smaller thickness ranging from only 4 mils to 12 mils (6, 8, and 10 mils also available). The ESD60x120 Zener diodes exhibit a breakdown voltage of up to 40V. They can be used for protecting a number of LEDs in a string ranging from 1 to 10 such as in RGB modules and other multi-chip modules. Protection from both positive and negative pulses (bidirectional signal) can also be possible by connecting two individual diodes with back-to-back topology.

High Brightness LEDs (HB LED) and High Power White LEDs using InGaN technology are manufactured to enable a market transition to energy efficient Solid-State Lighting (SSL). These LEDs continue to make major inroads into lighting applications that were conventionally dominated by incandescent light and other light sources. LEDs can be found in a wide array of applications ranging from traffic signals and automotive brake lights to full-color displays and LCD backlights. However, one of the main drawbacks of HB LED products is the fact that they are extremely sensitive to ESD. OnChip’s ESD60x120 diodes help to eliminate this weakness.

Availability and Pricing
The OnChip ESD60x120 diodes are available immediately worldwide at a unit price range of $0.19 to $0.45 depending on volumes and when shipped as undiced 5” wafers. They are also available as diced wafers on mylar/saw tape or in waffle packs for a slight price premium. These components are designed and developed at OnChip Devices’ Santa Clara facility and are produced to the highest quality standards.

About OnChip Devices
OnChip Devices is headquartered in Santa Clara, CA and is a global leader in Integrated Passive Devices. With its own silicon fabrication facility, strong partnerships with full turnkeys assembly, and test houses in Asia, OnChip is offering state-of-the-art silicon and ceramic solutions for High Brightness LED, Computing, and Consumer Electronics.